W-band monolithic oscillator using InAlAs/InGaAs HEMT

Kwon Y.; Pavlidis D.

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W-band monolithic oscillator using InAlAs/InGaAs HEMT

机译：使用InAlAs / InGaAs HEMT的W波段单片振荡器

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A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.

机译：使用亚微米HEMT技术设计和制造了W波段单片集成振荡器电路。在芯片级，振荡频率约为81 GHz，功率为-7 dBm。这是在W波段工作的InAlAs / InGaAs单片振荡器的首次报道。

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来源
《Electronics Letters》 |1990年第18期|P.1425-1426|共2页
作者
Kwon Y.; Pavlidis D.;
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作者单位

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave oscillators; 81 GHz; HEMT; InAlAs-InGaAs; W-band monolithic oscillator; submicron technology;

机译：III-V半导体;MMIC;铝化合物;场效应集成电路;砷化镓;铟化合物;微波振荡器;81 GHz;HEMT;InAlAs-InGaAs;W波段单片振荡器;亚微米技术;

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专利

1. A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator [J] . Youngwoo Kwon, Pavlidis D. IEEE Microwave and Guided Wave Letters . 1994,第5期

机译：100 GHz单片级联InAlAs / InGaAs HEMT振荡器
2. 11 GHz ultrawide-bandwidth monolithic photoreceiver using InGaAs pin PD and InAlAs/InGaAs HEMTs [J] . Akahori Y., Ikeda M. Electronics Letters . 1994,第3期

机译：使用InGaAs引脚PD和InAlAs / InGaAs HEMT的11 GHz超宽带单片光电接收器
3. 10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs [J] . Akahori Y., Akatsu Y. IEEE Photonics Technology Letters . 1992,第7期

机译：使用InGaAs p-i-n PD和平面掺杂InAlAs / InGaAs HEMT的10 Gb / s高速单片集成光接收器
4. A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier [C] . Ng, G.I., Lai, . 1995

机译：全钝化超低噪声W波段单片InGaAs / InAlAs / InP HEMT放大器
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well” [O] . G. B. Galiev, A. L. Vasiliev, R. M. Imamov, 2015

机译：错误到：“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”
8. W-Band Monolithic Oscillator Using InAlAs/InGaAs HEMT [R] . Kwon, Y., Pavlidis, D., Tutt, M., 1990

机译：采用Inalas / InGaas HEmT的W波段单片振荡器

W-band monolithic oscillator using InAlAs/InGaAs HEMT

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