A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer

摘要

A monolithically integrated F-band resistive HFET mixer has been designed, simulated, fabricated, and characterized. The mixer is based on an InAlAs/InGaAs/InP HFET with 0.15 /spl mu/m gate length. The measured minimum conversion loss is 9 dB at 112.5 GHz and an LO power of 4 dBm, which is the lowest conversion loss reported for resistive HFET mixers in this frequency range.