Reduction of Interface Traps and Enhancement of Channel Mobility in n-channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

摘要

N-channel MOSFETs are irradiated with gamma-rays (γ-rays) up to 3.16 MGy(SiO_2) at room temperature. Above 1 MGy, the effective channel mobility increases with increasing absorbed dose. A similar increase is observed for the Hall mobility in the inversion layer. In addition, the Hall-effect measurements indicate a reduction of the interface trap density.