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FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS
FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS
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机译:通过用铯离子处理氧化物界面形成具有高通道迁移率的SIC MOSFET
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摘要
Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.
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