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Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

机译：使用氧化亚氮（N2O）中生长的栅极氧化物增强4H-siC mOsFET中的反转沟道迁移率

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G. Gudjónsson; H. Ö. Ólafsson; E. Ö. Sveinbjörnsson;
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1. Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation [J] . Tilak V., Matocha K., Dunne G., IEEE Transactions on Electron Devices . 2009,第2期

机译：利用霍尔效应在钠增强氧化生长栅极氧化物的碳化硅基MOSFET中使用阱效应表征陷阱和反转层迁移率
2. Hall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxide [J] . Noguchi Munetaka, Iwamatsu Toshiaki, Amishiro Hiroyuki, Japanese journal of applied physics . 2019,第SB期

机译：具有热生长栅极氧化物的4H-SiC MOSFET反转层中的霍尔效应迁移率
3. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide [J] . Okamoto D., Yano H., Hirata K., Electron Device Letters, IEEE . 2010,第7期

机译：利用磷掺杂的栅氧化物改善Si面上4H-SiC MOSFET的反向沟道迁移率
4. Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N_2O) [C] . G. Gudjonsson, H. OE. Olafsson, E. OE. Sveinbjoernsson International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：使用一氧化二氮（N_2O）中生长的栅氧化物增强4H-SiC MOSFET的反向沟道迁移率
5. 4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction [D] . Harmon, Jeffrey Lee. 2019

机译：4H-SIC沟槽MOSFET：实用的表面沟道迁移率提取
6. Oxidation of a CU2S Complex by N2O and CO2: Insights into a Role of Tetranuclearity in the Cuz Site of Nitrous Oxide Reductase [O] . Sharareh Bagherzadeh, Neal P. Mankad -1

机译：N2O和CO2氧化CU2S复合物：洞察四核在一氧化二氮还原酶Cuz位点中的作用
7. P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing [O] . Noborio Masato, Suda Jun, Kimoto Tsunenobu 2009

机译：通过氧化沉积和N2O退火制造的4H-SiC {0001}和非基面上的P沟道MOSFET
8. Inversion Layer Mobility of MOSFET's with Nitrided Oxide Gate Dielectrics [R] . Schmidt, M. A., Terry, F. L., Mathur, B. P., 1988

机译：具有氮化氧化物栅极电介质的mOsFET的反型层迁移率

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

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