Inversion Layer Mobility of MOSFET's with Nitrided Oxide Gate Dielectrics

摘要

The inversion layer mobility of both n- and p-channel MOSFET's fabricated with nitrided oxide gate dielectrics has been studied. We report a degradation in effective channel mobility with increasing degree of nitridation, as much as 50 percent for electrons, noticeably less for holes. While both hole and electron mobilities are degraded by Coulombic scattering from nitridation-induced fixed charge, we attribute the additional mobility degradation for electrons to a reduction of the mobile electron density by electron trapping in near-interface traps and to additional Coulombic scattering of the remaining channel electrons by the trapped electrons. Reprints. (rh)