Inversion layer mobility of MOSFETs with nitrided oxide gate dielectrics

摘要

Reports a degradation in effective channel mobility with increasing degree of nitridation, as much as 50% for electrons, noticeably less for holes. While both hole and electron mobilities are degraded by Coulombic scattering from nitridation-induced fixed charge, the additional mobility degradation for electrons is attributed to a reduction of the mobile electron density by electron trapping in near-interface traps and to additional Coulombic scattering of the remaining channel electrons by the trapped electrons.