METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY

摘要

The method for forming oxide layer on sic, including thermal growth oxide layer on the silicon carbide layer are higher than 1175 °C, 1300 °C in temperature containing NO in the environment of oxide skin(coating) annealing. The oxide skin(coating) can NO anneal carborunbum tube that can be coated with silicon carbide. Oxide skin(coating) is formed, preliminary oxidation nitride layer can be heat and grow in the dry O2 of silicon carbide layer, and the pre-oxidation layer, which can be, to be reoxidized in wet O2.