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Process Development of Fan-Out interposer with Multi-layer RDL for 2.5D System in Package

机译:用于包装中的2.5D系统的具有多层RDL的扇出中介层的工艺开发

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In this paper, the fabrication process flow and results of a Fan out interposer for 2.5D system in package were presented. The Fan-out interposer can replace conventional through silicon interposer with reduction in both package size and cost. Fan-out interposer package has a 30 × 25 mm2 package size which includes four layers of redistribution layers (RDLs) and 200 μm thick epoxy mold support and Cu pillars through Mold Interconnections (TMIs). High density, fine pitch Cu RDL was used to provide connection to the large number of channels between an ASIC and two high bandwidth memory chips. RDL-first integration flow was used to fabricate the fan-out interposer using a laser de-bonding technique. The fan-out interposer fabrication process and the assembly process of chips and board assembly were demonstrated.
机译:本文介绍了用于2.5D系统封装的Fan out中介层的制造工艺流程和结果。扇出插入器可以减小封装尺寸和成本,从而替代传统的直通硅插入器。扇出中介层包装尺寸为30×25 mm 2 封装尺寸,包括四层再分布层(RDL)和200μm厚的环氧模具支架以及通过模具互连(TMI)的铜柱。高密度,细间距的Cu RDL用于提供与ASIC和两个高带宽存储芯片之间的大量通道的连接。 RDL-first集成流程用于通过激光剥离技术制造扇形插入层。演示了扇出中介层的制造过程以及芯片和板组装的组装过程。

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