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The development of effective model for thermal conduction analysis for 2.5D packaging using TSV interposer

机译:使用TSV插入器开发2.5D封装导热分析的有效模型

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摘要

The effective model for the orthotropic TSV (Through Silicon Via) interposer in heat conduction for 2.5D IC integration was proposed in this study. The simple parallel model was used in out-of-plane direction to predict the effective thermal conductivity for the TSV interposer. The in-plane effective thermal conductivity for the interposer was derived on basis of heat balances. By introducing the effective orthotropic thermal parameters, the TSV structures can be ignored in the present effective model. The computations using the effective model for TSV interposer and the 2.5D package with interposer were carried out. The results showed that the accuracy of the effective model was above 95% comparing with the real model including TSV structures when the volume ratio of the electroplating copper and the silicon interposer is smaller than 10%. Using the effective model, the parametric studies on the interposer sizes and the thermal conductivities of different materials in the 2.5D package were conducted with higher efficiency. The results showed that the performance and sizes of EMC (Epoxy Molding Compound) and the package substrate are more important than that of internal underfills in heat dissipation of the package with TSV interposer.
机译:提出了正交各向异性TSV(直通硅通孔)中介层在2.5D IC集成中导热的有效模型。在平面外方向上使用了简单的并行模型来预测TSV中介层的有效导热系数。中介层的面内有效热导率是根据热平衡得出的。通过引入有效的正交各向异性热参数,可以在当前有效模型中忽略TSV结构。使用有效的TSV中介层模型和带有中介层的2.5D封装进行了计算。结果表明,当电镀铜和硅中介层的体积比小于10%时,与包含TSV结构的真实模型相比,有效模型的精度达到95%以上。使用有效模型,可以以更高的效率对2.5D封装中不同材料的中介层尺寸和热导率进行参数研究。结果表明,在使用TSV中介层进行封装散热时,EMC(环氧模塑料)和封装基板的性能和尺寸比内部底部填充的性能和尺寸更为重要。

著录项

  • 来源
    《Microelectronics & Reliability》 |2014年第2期|425-434|共10页
  • 作者

    He Ma; Daquan Yu; Jun Wang;

  • 作者单位

    Institute of Microelectronics Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang District, Beijing 100029, PR China,Jiangsu R&D Center for Internet of Things, No. 200, Linghu Road, New District, Wuxi 214315, PR China;

    Institute of Microelectronics Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang District, Beijing 100029, PR China,Jiangsu R&D Center for Internet of Things, No. 200, Linghu Road, New District, Wuxi 214315, PR China;

    Department of Materials Science, Fudan University, No. 220, Handan Road, Shanghai 200433, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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