机译:使用TSV插入器开发2.5D封装导热分析的有效模型
Institute of Microelectronics Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang District, Beijing 100029, PR China,Jiangsu R&D Center for Internet of Things, No. 200, Linghu Road, New District, Wuxi 214315, PR China;
Institute of Microelectronics Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang District, Beijing 100029, PR China,Jiangsu R&D Center for Internet of Things, No. 200, Linghu Road, New District, Wuxi 214315, PR China;
Department of Materials Science, Fudan University, No. 220, Handan Road, Shanghai 200433, PR China;
机译:硅中介层上模制多芯片的热增强型2.5D封装的研究
机译:一种新型的中介层的制造和电学特性,该中介层具有用于2.5D / 3D应用的具有超低电阻率的直通硅通孔(TSV)的聚合物衬里和硅柱
机译:TSV中介层堆叠的热机械应力分析的建模简化
机译:用于高性能处理器封装的2.5D TSV插入器的设计,仿真和工艺开发
机译:MEMS传感器封装和TSV中介层封装的应力和变形最小。
机译:基于双相滞后热传导模型的半无限介质热冲击断裂力学分析
机译:2.5D包装中间体机械应力的有限元分析