Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs

摘要

This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n- and p-type composite MOSFETs.