首页> 外文会议>Conference on Photomask Technology; 20070918-21; Monterey,CA(US) >Inverse Lithography Technology (ILT) Keep the balance between SRAF and MRC at 45and 32 -nm
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Inverse Lithography Technology (ILT) Keep the balance between SRAF and MRC at 45and 32 -nm

机译:反光刻技术(ILT)使SRAF和MRC之间的平衡保持在45和32 nm

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In this paper, we present the Luminescent's ILT approach that can rapidly solve for the optimal photomask design. We will discuss the latest development of ILT at Luminescent in the areas of sub-resolution assist feature (SRAF) generation and optimization to improve process window, and mask rule compliance (MRC). Results collected internally and from customers demonstrate that ILT is not only an R&D tool, but also a tool quickly maturing for production qualification at advanced technology nodes. By enforcing the proper constraints while optimizing the masks, ILT can improve process windows while maintaining mask costs at a reasonable level.
机译:在本文中,我们介绍了可快速解决最佳光掩模设计的Luminescent ILT方法。我们将在子分辨率辅助功能(SRAF)生成和优化以改善过程窗口以及遮罩规则合规性(MRC)方面讨论发光ILT在发光方面的最新发展。内部和从客户那里收集的结果表明,ILT不仅是一种研发工具,而且还是一种迅速成熟的工具,可以在先进技术节点上进行生产认证。通过在优化掩模时执行适当的约束,ILT可以改善工艺窗口,同时将掩模成本保持在合理的水平。

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