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Inverse Lithography Technology (ILT) Keep the balance between SRAF and MRC at 45and 32 -nm

机译:逆光刻技术(ILL)保持SRAF和MRC之间的平衡,在45和32毫米

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摘要

In this paper, we present the Luminescent's ILT approach that can rapidly solve for the optimal photomask design We will discuss the latest development of ILT at Luminescent in the areas of sub-resolution assist feature (SRAF) generation and optimization to improve process window, and mask rule compliance (MRC) Results collected internally and from customers demonstrate that ILT is not only an R&D tool, but also a tool quickly maturing for production qualification at advanced technology nodes. By enforcing the proper constraints while optimizing the masks, ILT can improve process windows while maintaining mask costs at a reasonable level.
机译:在本文中,我们提出了可以迅速解决最佳光掩模设计的发光的ILT方法,我们将讨论在子分辨率辅助特征(SRAF)生成和优化以改进过程窗口的发光的最新开发在内部和客户内部收集的掩码规则合规性(MRC)结果表明ILL不仅是R&D工具,还可以在先进技术节点上快速了解生产资格的工具。通过在优化掩码的同时执行适当的约束,ILT可以在合理级别维护掩码成本的同时改善进程窗口。

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