Advanced lithography models for strict process control in the 32 nm technology node

摘要

Macroscopic photoresist processing simulation tools are combined with mesoscopic stochastic simulations in order to enable quantification of the discrete composition of the photoresist material. The effect of degree of polymerization of the polymer 2D and 3D models on the CD and LWR of 32 nm lines/spaces exposed either under non-diffraction-limited conditions and with 193 nm immersion lithography simulation are studied.