High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP

摘要

Results of Two-dimensional Electron Gas Field Effect Transistors (TEGFETs) processed on InGaAs/InAIAs modulation doped heterostructures grown by Molecular Beam Epitaxy (MBE) are presented. We obtain extrinsic transconductances of 424mS/mm for 1×50¿m² depletion mode TEGFETs. A detailed static characterization of the devices and energy band profile calculation reveal that a more efficient channel modulation at high current densities can be achieved.