High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

机译：高电子迁移率In 0.53 Ga 0.47 As / In 0.8 Ga 0.2 作为复合通道调制掺杂金属有机气相外延生长的结构

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Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1−xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm2/Vs at the sheet carrier concentration (Ns) of 2.1×1012 cm−2, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.

机译：研究了InP上富In的In x Ga 1-x As的金属有机气相外延（MOVPE）生长，作为获得极高电子迁移率的方法。调制掺杂（MD）结构。高质量In 0.53 Ga 0.47 As / In 0.8 Ga 0.2 作为复合通道（CC）MD结构在不显着降低生长温度的情况下成功地生长了它们。在薄板载流子浓度（Ns）为2.1×10 ^{12 cm ^{−2 <时，CC MD中的室温电子迁移率达到150,000 cm ^{2 / Vs。 / sup>，这是MOVPE生长的基于InP的InGaAs / InAlAs MD结构中报告的最高值之一。}}}

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《2010 International Conference on Indium Phosphide and Related Materials》|2010年|P.1-4|共4页
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Sugiyama Hiroki; Matsuzaki Hideaki; Yokoyama Haruki; Enoki Takatomo;
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High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

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