High-k HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

摘要

A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon)-type memory with a SiO/sub 2//high-K/SiO/sub 2/ (SOHOS) structure is proposed. Compared to other high-K charge storage layers, HfAlO shows the advantages of high speed program/erase of HfO/sub 2/ as well as good charge retention of Al/sub 2/O/sub 3/, which makes HfAlO the most promising candidate for the charge storage layer. The charge storage and program/erase mechanisms of different charge storage layers in SONOS-type structures are also investigated.