Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

摘要

Operation properties of polysilicon–oxide–nitride–oxide–silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%–28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.