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CHARGE TRAPPING NONVOLATILE MEMORY DEVICES WITH A HIGH-K BLOCKING INSULATION LAYER
CHARGE TRAPPING NONVOLATILE MEMORY DEVICES WITH A HIGH-K BLOCKING INSULATION LAYER
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机译:带高K阻挡层的电荷捕捉非易失性存储器设备
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摘要
Provided is a charge trapping nonvolatile memory device. The charge trapping nonvolatile memory device includes: an active pattern and a gate electrode, spaced apart from each other; a charge storage layer between the active pattern and the gate electrode; a tunnel insulation layer between the active pattern and the charge storage layer; and a blocking insulation layer disposed between the charge storage layer and the gate electrode and including a high-k layer with a higher dielectric constant than the tunnel insulation layer and a barrier insulation layer with a higher band gap than the high-k layer. A physical thickness of the high-k layer is less than or identical to that of the barrier insulation layer
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