Design and Development of High Etch Rate Organic Bottom Antireflective Coating for Sub-100 nm Node and Beyond

摘要

As the semiconductor industry sails into the 100nm node and beyond, enabled by the integration of ArF lithography, new Bottom Antireflective Coatings (B.A.R.C.s) are required to address challenges associated with this new technology. Of these challenges, higher etch rates and better compatibility with the over coated resist are of central importance. New polymer platforms and additives in B.A.R.C. formulations will be required to overcome these challenges. The intent of this publication is to introduce our newly developed B.A.R.C.S designed to addresses the challenges of ArF lithography. All are currently available for integration into mass production of sub lOOnm integrated circuit devices.