Materials Evaluation of Antireflective Coatings for Single-Layer 193-nmLithography

摘要

A survey of optical constants for a variety of materials measured at 193 nmsuggests that antireflection measures well be necessary for single-layer resist lithography at 193 nm. The extent to which standing waves occur in 193-nm resists is similar in magnitude to those occurring at 248 nm. To help reduce these effects, a new spin-on antireflective layer has been developed. It is composed of a polymeric dye in a phase compatible blend with a transparent base polymer, can be thermally cured to render it insoluble, and is compatible with chemically amplified resists. In addition to this spin-on material, extension of existing 248-nm dry deposited antireflective layers to 193 nm should allow for either spin-on or dry-deposited antireflection coatings for 193-nm lithography. (AN).