Performance Evaluation of the metal induced lateral crystallization (MILC) poly-Si_(1-x)Ge_x thin films for optoelectronic applications

摘要

In this report, both oxidized undoped c-Si (100) wafer and conventional glass were used as the substrate for a-Si_(1-x)Ge_x:H film deposition. The silicon substrate is selected for the sake of scanning electron microscopy (SEM) analysis. By annealing treated at 400℃, the a-Si_(1-x)Ge_x:H film by Au induced shows a very fast crystallization rate (15.1～15.9 μm/hr) and the optimal MILC lengths can be obtained for a time required. Based on this project, MILC by Au induced is a suitable technology to low temperature fabrication of poly-Si_(1-x)Ge_x:H TFT on glass substrate for the low cost IC applications.