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A method of fabricating Thin Film Transistor using Metal Induced Lateral crystallization MILC by etchstop process
A method of fabricating Thin Film Transistor using Metal Induced Lateral crystallization MILC by etchstop process
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机译:利用金属腐蚀终止工艺制造金属诱导的横向晶化MILC薄膜晶体管的方法
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摘要
A method of forming wires of a poly-crystalline TFT by crystallizing an amorphous silicon thin film using a metal film is provided. The wires forming method includes the steps of: removing a MILC metal film; forming etch-stopper layer patterns on at least part of respective source and drain regions formed on a semiconductor layer; forming an interlayer insulation film on the substrate; etching the interlayer insulation film to thereby form contact holes which expose the etch-stopper layer patterns of the source and drain regions; and forming a wires metal film contacting the etch-stopper layer patterns, and patterning the wires metal film to thus form metal wires. Thus, as the etch-stopper layer patterns are additionally installed at the contact positions, a silicon thin film can be protected at etching the interlayer insulation film.
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