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Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor
Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor
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机译:使用金属诱导结晶工艺的薄膜晶体管及其制造方法和使用该薄膜晶体管的有源矩阵平板显示器
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摘要
Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystallization inducing metal layer below a buffer layer and diffusing the crystallization inducing metal layer. The thin film transistor may include a crystallization inducing metal layer formed on an insulating substrate, a buffer layer formed on the crystallization inducing metal layer, and an active layer formed on the buffer layer and including source/drain regions, and including polycrystalline silicon crystallized by the MIC process.
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