首页> 外国专利> METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE OF A SEMICONDUCTOR ON INSULATOR TYPE WITH DIFFERENT PATTERNS

METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE OF A SEMICONDUCTOR ON INSULATOR TYPE WITH DIFFERENT PATTERNS

机译:在不同类型的绝缘子上制造半导体的微电子结构的方法

摘要

A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.
机译:通过形成包括形成基板的板,连续的绝缘层和半导体层的堆叠均匀结构来产生具有不同图案的绝缘体上半导体类型的微结构。连续绝缘层是至少三个基本层的堆叠,包括底部基本层,至少一个中间基本层和覆盖半导体层的顶部基本层,其中底部基本层和顶部基本层中的至少一个层是绝缘材料。在堆叠的均匀结构中,通过修改图案之一中的至少一个基本层来区分至少两个图案,使得基本层在两个图案之间具有显着不同的物理或化学性质,其中至少一个底层和顶层基本层是保持不变的绝缘材料。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号