Silicon-on-insulator Structure Fabricated by Epitaxial Layer Transfer

摘要

Epitaxial monocrystalline silicon film was grown on the porous silicon using ultra-high vacuum electron beam evaporation. Silicon-on-insulator(SOI) materials were successfully produced by bonding and etching the back of porous silicon. The quality of the SOI samples was investigated by using the cross-sectional transmission electron microscopy (XTEM), spreading resistance profile (SRP), atomic force microscopy (AFM) and four-crystal X-ray diffraction (FCXRD). Experimental results show the SOI sample has good properties. Besides, the factors resulting in lattice strain of this SOI structure and the methods to reduce it are given.