Sensing properties of electrolyte-insulator-semiconductor capacitors with nanoscale patterns fabricated by nano imprint lithography

摘要

This study addresses on the characteristics of electrolyte-insulator-semiconductor (EIS) sensors with the nanoscale patterns fabricated by nano imprint lithography (NIL). The proposed sensors with the nanoscale patterns, such as square and line, exhibited higher sensitivity and lower hysteresis than that with the conventional ones. For the proposed sensors, with the high surface-volume ratio of the nano patterns, the surface potential response to the change of ion concentration can be improved. With this approach, the devices can be fabricated for future high performance biosensor applications.