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Single-wafer process for fabricating a nonvolatile charge trap memory device
Single-wafer process for fabricating a nonvolatile charge trap memory device
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机译:用于制造非易失性电荷陷阱存储器件的单晶片工艺
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摘要
A method for fabricating a nonvolatile charge trap memory device is described. The method includes first forming a tunnel dielectric layer on a substrate in a first process chamber of a single-wafer cluster tool. A charge-trapping layer is then formed on the tunnel dielectric layer in a second process chamber of the single-wafer cluster tool. A top dielectric layer is then formed on the charge-trapping layer in the second or in a third process chamber of the single-wafer cluster tool.
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