Connecting structure and method of manufacturing the same, not - volatile a semiconductor memory device, electrical memory card and the electrical device

摘要

Connecting structure totwo offset rows of uniformly spaced contacts (2), wherein each contact row along a first direction (3) extends,Conductor tracks (12) to extend along a the first direction (3) crossing second direction (4) extend,an insulation layer (7), which are below the conductor tracks (12) and above the two contact rows is arranged and intermediate contacts (8) comprises,each intermediate contact (8) a contact (2) of the two rows of contacts, with the conductor track (12) which connects,the intermediate contacts (8) are designed as between the contact paths extending along the second direction (4) extend,the between the contact webs directly to the conductor tracks (12) adjacent.