Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

摘要

The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before Xray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation.