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Epitaxial source/drain contacts self-aligned to gates for deposited fet channels
Epitaxial source/drain contacts self-aligned to gates for deposited fet channels
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机译:外延源极/漏极触点自对准栅极,用于沉积FET通道
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摘要
A method of forming a self-aligned device is provided and includes depositing carbon nanotubes (CNTs) onto a crystalline dielectric substrate, isolating a portion of the crystalline dielectric substrate encompassing a location of the CNTs, forming gate dielectric and gate electrode gate stacks on the CNTs while maintaining a structural integrity thereof and forming epitaxial source and drain regions in contact with portions of the CNTs on the crystalline dielectric substrate that are exposed from the gate dielectric and gate electrode gate stacks.
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