Substitutional-Gate MOSFETs With Composite $( hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}/hbox{InAs}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

摘要

We report enhancement-mode composite-channel $(hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}/hbox{InAs}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As})$ MOSFETs fabricated using a substitutional-gate process, with $hbox{n}^{+}$ relaxed InAs source–drain regions formed by regrowth by molecular beam epitaxy. A device with 70-nm gate length and 2-nm $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$/3.5-nm InAs/3-nm $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ channel showed a peak transconductance of greater than 0.76 $hbox{mS}/muhbox{m}$ at $V_{rm ds} = hbox{0.4} hbox{V}$ and showed $I_{d} = hbox{0.5} hbox{mA}/muhbox{m}$ at $V_{rm ds} = hbox{0.4} hbox{V}$ and $V_{rm gs} - V_{rm th} = hbox{0.7} hbox{V}$. The subthreshold swing at $V_{rm ds} = hbox{0.1} hbox{V}$ was 130 mV/dec.