$hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

摘要

We report $hbox{Al}_{2}hbox{O}_{3}/hbox{In}_{0.53}hbox{Ga}_{0.47} hbox{As}$ MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain $hbox{n}^{+}$ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ channel with an $hbox{In}_{0.48}hbox{Al}_{0.52}hbox{As}$ back confinement layer and the $hbox{n}^{++}$ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed $I_{D} = hbox{0.95} hbox{mA}/muhbox{m}$ current density at $V_{rm GS} = hbox{4.0} hbox{V}$ and $g_{m} = hbox{0.45} hbox{mS}/muhbox{m}$ peak transconductance at $V_{rm DS} = hbox{2.0} hbox{V}$.