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Compensation of changes in MEMS capacitive transduction

机译:补偿MEMS电容转换的变化

摘要

A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.
机译:一种用于补偿MEMS装置上的应变的方法,包括在操作系统包括MEMS装置的第一模式下产生指示MEMS装置上的应变的信号。该方法包括基于信号在操作系统的第二模式下补偿应变。产生信号可以包括将MEMS装置的谐振频率的指示符与MEMS装置的预定谐振频率进行比较。产生信号可以包括将应变敏感设备的第一输出与应变不敏感设备的第二输出进行比较并生成其指示符。产生信号可以包括在第一模式下感测MEMS装置的应变敏感电极的第一电容转换并基于其产生信号。可以在第二模式下禁用MEMS器件的应变敏感电极。

著录项

  • 公开/公告号US9000833B2

    专利类型

  • 公开/公告日2015-04-07

    原文格式PDF

  • 申请/专利权人 SILICON LABORATORIES INC.;

    申请/专利号US201313786686

  • 发明设计人 AARON CAFFEE;EMMANUEL P. QUEVY;

    申请日2013-03-06

  • 分类号H01L41/00;H02N1/00;B81B7/00;

  • 国家 US

  • 入库时间 2022-08-21 15:17:01

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