Plane orientation measuring method of a single crystal wafer using a high-resolution X-ray rocking curve measurement

摘要

The present invention relates to a surface orientation measuring method of the single crystal wafer, and more particularly, by using a rocking curve measurement of the high resolution X-ray diffractometry to determine the direction of the surface angle and surface angle of the wafer, measurement eccentric angle and direction in which the surface vertical axis of the rotating shaft and the wafer forms of apparatus can also be measured, relates to a surface orientation measuring method of a single crystal wafer using a high-resolution X-ray rocking curve measurement.FIELD 2