DETERMINATION METHOD OF SURFACE ORIENTATION OF SINGLE CRYSTAL WAFER USING HIGH RESOLUTION X-RAY ROCKING CURVE MEASUREMENT

摘要

The present invention relates to a determination method of the surface orientation of a single crystal wafer. More particularly, the present invention relates to a determination method of the surface orientation of a single crystal wafer using high resolution X-ray rocking curve measurement capable of measuring an eccentric angle and direction between the rotation axis of measurement equipment and the surface vertical axis of a wafer by determining the surface angle of the wafer and the direction of the surface angle using the high resolution X-ray rocking curve measurement.;COPYRIGHT KIPO 2014