Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

摘要

Double and triple crystal rocking curve and peak position maps are constructed for a 4H-SiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90°, and an asymmetric (12 3 6) reflection for the wafer in the normal position. These measurements were corrected for the 'wobble' in the instrument by scanning a 4" (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.