首页> 外国专利> METHOD FOR MEASURING PLANE ORIENTATION OF SINGLE CRYSTAL SUBSTRATE COMPRISING UNIAXIAL CRYSTAL, AND DEVICE FOR MEASURING PLANE ORIENTATION USED FOR THE METHOD

METHOD FOR MEASURING PLANE ORIENTATION OF SINGLE CRYSTAL SUBSTRATE COMPRISING UNIAXIAL CRYSTAL, AND DEVICE FOR MEASURING PLANE ORIENTATION USED FOR THE METHOD

机译:包含单轴晶体的单晶基质的平面取向的测量方法,以及用于该方法的平面取向的测量装置

摘要

PROBLEM TO BE SOLVED: To provide a method by which a plane orientation of a single crystal substrate comprising a uniaxial crystal can be accurately and easily measured by an optical process without using an X-ray diffraction method, and the plane orientation can be measured without restrictions in thickness of the substrate or plane orientations thereof.SOLUTION: A method for measuring a plane orientation of a single crystal substrate comprising a uniaxial crystal is provided, using such a property that when light in a given direction is made to be incident to the single crystal substrate comprising a uniaxial crystal, a refractive index for the light is a synthesized value of refractive indices specific to the crystal main axis and is turned to be a function of an incident direction of the light. The method is carried out through two separated steps of measurement: a step of measuring an inclination orientation of the crystal main axis to the original flat orientation of the substrate; and a step of measuring an inclination angle of the crystal main axis with respect to the normal direction of the substrate.
机译:解决的问题:提供一种方法,通过该方法可以在不使用X射线衍射法的情况下通过光学方法精确且容易地测量包括单轴晶体的单晶基板的平面取向,并且可以在不使用X射线衍射法的情况下测量平面取向。解决方案:提供一种用于测量包括单轴晶体的单晶衬底的平面取向的方法,其使用的特性是使给定方向的光入射到该单晶衬底。包括单轴晶体的单晶衬底,光的折射率是特定于晶体主轴的折射率的合成值,并且被转换为光的入射方向的函数。该方法通过两个分开的测量步骤进行:测量晶体主轴相对于基板的原始平面取向的倾斜方向的步骤;以及测量晶体主轴相对于基板的原始平坦方向的倾斜方向的步骤。测量晶体主轴相对于基板法线方向的倾斜角的步骤。

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