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Methods of Manufacturing Semiconductor Devices Including Gate Patterns with Sidewall Spacers
Methods of Manufacturing Semiconductor Devices Including Gate Patterns with Sidewall Spacers
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机译:包括具有侧壁间隔物的栅极图案的半导体器件的制造方法
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摘要
A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.
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