SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PROTECTING THE SIDEWALL OF A GATE PATTERN TO A GATE SPACER

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve production yield by preventing the formation of a bridge between a gate pattern and plug in a LPC process.;CONSTITUTION: An element isolation layer(204) is formed within a semiconductor substrate(200) in order to limit an active area(202). A recess pattern for a gate is formed in the active area and element isolation layer. A gate pattern(210) is formed on the recess pattern. A gate spacer(220) is formed in order to cover the gate pattern. The space is formed between an upper part of the recess pattern for the gate on the element isolation layer and the gate pattern.;COPYRIGHT KIPO 2010