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FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

机译:半导体器件瞬态行为的有限差分分数阶跃方法

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摘要

Characteristic finite difference fractional step schemes are put forward. The electric Potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are treated by a kind of characteristic finite difference fractional step methods. The temperature equation is described by a fractional step method. Thick and thin grids are made use of to form a complete set. Piecewise threefold quadratic interpolation, symmetrical extension, calculus of variations, commutativity of operator product, decomposition of high order difference operators and prior estimates are also made use of. Optimal order estimates in l2 norm are derived to determine the error of the approximate solution. The well-known problem is thorongley and completely solred.
机译:提出了特征有限差分步骤方案。电势方程由七点有限差分方案描述,电子和空穴浓度方程被一类特征有限差分步骤方法处理。通过分数步骤方法描述温度方程。厚且薄的网格采用了完整的设置。分段三倍二次插值,对称延伸,变化的微积分,操作员产品的交换,高阶差分运算符的分解和现有估计的分解也是利用的。导出L2规范中的最佳顺序估计以确定近似解的错误。众所周知的问题是Thorongley和完全溶于溶解。

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