GATE DRIVING CIRCUIT FOR SiC MOSFET

摘要

The present invention relates to a gate driving circuit for a SiC MOSFET which comprises: a first driving circuit for generating a first driving current to drive a turn-on operation of a power switch according to a pulse width control signal output by a pulse width modulation (PWM) control unit; a second driving circuit for generating a second driving current to drive a turn-off operation of the power switch according to the pulse width control signal; and a negative voltage generation unit for generating a negative voltage to perform the turn-off operation of the power switch by using a switched capacitor.;COPYRIGHT KIPO 2019