The present invention relates to a gate driving circuit for a SiC MOSFET, and a first driving circuit for generating a first driving current for driving a turn-on operation of a power switch according to a pulse width control signal output from a PWM control unit. ; a second driving circuit for generating a second driving current for driving a turn-off operation of the power switch according to the pulse width control signal; and a negative voltage generator for generating a negative voltage for turning off the power switch using a switched capacitor.
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