IGBT power transistor, producible in trench-isolated SOI technology and method of making same

摘要

IGBT power transistor for a high voltage, producible in a trench-isolated SOI technology, in a defined area of an active layer (3) of the SOI disk located on the SOI support disk (1), which is buried in the vertical direction horizontal oxide layer (2) of the SOI disc and in the lateral direction by the circumferential vertical isolation trench (4) is electrically insulated and in the interior of a vertical highly doped layer (5) and a horizontal buried highly doped layer (6), both with the same charge carrier type the IGBT provided with one or more emitter cells (11), each consisting of an IGBT well region (7) with a doping of the opposite charge carrier type as the active layer (3), an emitter region ( 9) with the same charge carrier type as the active layer (3), a gate electrode (10) and a metallization of the emitter and Bodyanschl - wherein in the collector region a field oxide (20) is separated from the one or more emitter cells (11), a well region (28) with a charge carrier type of the active layer (3) is present, wherein the well region (28) is adjacent to the highly doped vertical layer (5) and terminates below the field oxide (20); and there is a highly doped collector region (22) having a charge carrier type opposite the active layer (3), a heavily doped junction region adjacent thereto in the direction of isolation trench (4) (26) of the same charge carrier type as the active layer (3) and adjacent thereto a heavily doped region (24) having a charge carrier type opposite the active layer (3) which projects into the vertical heavily doped layer (5); Layer (32); - wherein first contact holes (30) lying over the highly doped collector region (22) and second contact holes (40), proportionately above the heavily doped And a collector terminal (12) is high-resistance electrically short-circuited to the vertical highly doped layer (5) by means of a contact metallization (60), - wherein a resistance of the short circuit is determined by the doping concentration of the well region (28) and the lateral extension of the heavily doped region (24) from the field oxide (20) toward the isolation trench (4), and the through loss or the switching loss of an IGBT respectively by size and number of first and second contact holes ( 30; 40) as well as the distances in each case one row of the contact holes (30; 40) is adjustable.