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Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module.

机译：绝缘栅双极型晶体管（IGBT）功率模块中开关脉冲的热模拟。

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A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.

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作者
Ovrebo, G. K.;
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年度 2015
页码 1-24
总页数 24
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bipolar transistors; Pulses; Thermal properties; Commerce; Gates(circuits); Insulation; Modular construction; Power; Simulation; Switching; Thermal radiation;

机译：双极晶体管;脉冲;热特性;商业;门（电路）;绝缘;模块化结构;功率;模拟;开关;热辐射;
入库时间 2022-08-29 10:47:24

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专利

1. The complementary insulated-gate bipolar transistor (CIGBT)-a new power switching device [J] . Boisvert D.M., Plummer J.D. IEEE Electron Device Letters . 1990,第9期

机译：互补绝缘栅双极晶体管（CIGBT）-一种新型功率开关器件
2. Parametric Measurements of Switching Losses of Insulated Gate Bipolar Transistor in Pulsed Power Applications [J] . Strowitzki C.F. IEEE Transactions on Plasma Science . 2013,第10aPart1期

机译：脉冲功率应用中绝缘栅双极晶体管开关损耗的参数测量
3. Liquid cooling module incorporating a metal foam and fin hybrid structure for high power insulated gate bipolar transistors (IGBTs) [J] . Applied thermal engineering: Design, processes, equipment, economics . 2020,第期

机译：液体冷却模块包含用于高功率绝缘栅双极晶体管（IGBT）的金属泡沫和鳍混合结构
4. Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias [C] . Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, International Conference on Applied System Innovation . 2020

机译：绝缘栅极晶体管（IGBT）在绝缘栅极偏压驱动的双极晶体管方面的电气性能
5. Modeling of SiC P-channel insulated gate bipolar transistors (IGBTS). [D] . Saadeh, Mahmood Shihadeh. 2011

机译：SiC P沟道绝缘栅双极晶体管（IGBTS）的建模。
6. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss [O] . Hong-kai Mao, Ying Wang, Xue Wu, 2019

机译：低关断损耗的4H-SiC沟槽绝缘栅双极晶体管的仿真研究
7. The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs) [O] . Adrian Pietruszka, Paweł Górecki, Sebastian Wroński, 2021

机译：焊接轮廓对绝缘栅双极晶体管热参数的影响（IGBTS）

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module.

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