Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology

摘要

A new LIGBT structure is proposed based on partial isolation SOI technology and demonstrated through numerical simulations. In comparison with conventional SOI LIGBITs, the new structure offers an enhanced RESURF (REduced SURface Field) effect and improved heat dissipation with no compromise in the switching speed and on-state resistance.