Provided are: a palladium-coated copper bonding wire which does not undergo the formation of shrinkage cavities during a first bonding procedure, has high bonding reliability, and can keep excellent bonding reliability steadily for a long period even under a high-temperature high-humidity environment; a bonded structure of the palladium-coated copper bonding wire; a semiconductor device; and a method for manufacturing a semiconductor device. A bonding wire which is a Pd-coated copper bonding wire comprising a copper core material and a Pd layer and containing a sulfur-group element, wherein the concentration of Pd is 1.0 to 4.0% by mass, the total concentration of the sulfur-group element is 50 ppm by mass or less, and the concentration of S is 5 to 2 ppm by mass or the concentration of Se is 5 to 20 ppm by mass or the concentration of Te is 15 to 50 ppm by mass inclusive all relative to the total amount of copper, Pd and the sulfur-group element; and a wire-bonded structure having a Pd-rich bonding region which is located in the vicinity of a bonding face between an Al-containing electrode and a ball bonding part in an semiconductor chip and in which the Pd concentration is 2.0% by mass or more relative to the total concentration of Al, copper and Pd.
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