Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and method for manufacturing semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a palladium-coated copper bonding wire which does not generate shrinkage cavities at the time of first bonding, has high bonding reliability, and can stably maintain excellent bonding reliability for a long period of time even in a high temperature and high humidity environment. Providing a bonded structure, a semiconductor device, and a method for manufacturing the semiconductor device. A bonding wire is a Pd-coated copper bonding wire having a copper core material and a Pd layer and containing a sulfur group element, and the total of copper, Pd and sulfur group elements is Pd. The concentration is 1.0 mass% to 4.0 mass%, the total concentration of group sulfur elements is 50 mass ppm or less, the S concentration is 5 mass ppm to 2 mass ppm, or the Se concentration is 5 mass ppm to 20 mass ppm. Alternatively, the Te concentration is 15 mass ppm to 50 mass ppm or less, and the Pd concentration is 2.0 with respect to the total of Al, copper, and Pd in the vicinity of the joint surface between the electrode containing Al of the semiconductor chip and the ball joint. A wire bonding structure having a Pd concentrated bonding region having a mass% or more. [Selection diagram] Fig. 1