Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and method of manufacturing semiconductor device

摘要

The present invention relates to a palladium-coated copper bonding wire which does not form shrinkage spots at the time of first bonding, has high bonding reliability, and can stably maintain excellent bonding reliability even in a high temperature and high humidity environment for a long period of time The present invention provides a junction structure, a semiconductor device, and a method of manufacturing the semiconductor device. A bonding wire is a Pd-coated copper bonding wire having a copper core material and a Pd layer and containing a sulfur group element, wherein Pd is added to a total of copper, Pd and a sulfur group element. The concentration is 1.0 mass% to 4.0 mass%, the sulfur group element concentration is 50 mass ppm or less in total, the S concentration is 5 mass ppm to 2 mass ppm, or the Se concentration is 5 mass ppm to 20 mass ppm Or, the concentration of Te is 15 mass ppm to 50 mass ppm or less, and the concentration of Pd is 2.0 or less with respect to the total of Al, copper, and Pd in the vicinity of the bonding surface between the electrode containing Al and the ball bonding portion of the semiconductor chip. A wire bonding structure having a Pd-rich bonding area which is not less than% by mass. [Selected figure] Figure 1