首页> 外国专利> PALLADIUM-COATED COPPER BONDING WIRE, METHOD FOR PRODUCING PALLADIUM-COATED COPPER BONDING WIRE, WIRE JUNCTION STRUCTURE USING SAME, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME

PALLADIUM-COATED COPPER BONDING WIRE, METHOD FOR PRODUCING PALLADIUM-COATED COPPER BONDING WIRE, WIRE JUNCTION STRUCTURE USING SAME, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME

机译:钯包覆铜键合线,制造钯包覆铜键合线的方法,使用相同的导线结结构,半导体装置以及制造相同方法的方法

摘要

A Pd-coated Cu bonding wire according to an embodiment of the present invention comprises 1.0-4.0 mass% of Pd and a total of 50 ppm by mass or less of sulfur group elements (5.0-12 ppm by mass of S, 5.0-20.0 ppm by mass of Se, and/or 15.0-50 ppm by mass of Te). The 100 crystal orientation in the crystal plane of a cross section of the wire is 15% or more, and the 111 crystal orientation is 50% or less. When a free air ball is formed on the wire and the tip part is analyzed, a Pd concentration area is observed on the surface thereof.
机译:根据本发明的实施方式的Pd包覆的Cu键合线包含1.0-4.0质量%的Pd和总计50质量ppm以下的硫族元素(5.0-12质量ppm的S,5.0-20.0的质量分数为Se(质量分数)和/或Te的质量分数为15.0-50 ppm。线的横截面的晶面中的<100>晶体取向为15%以上,并且<111>晶体取向为50%以下。当在线上形成自由空气球并分析尖端部分时,在其表面上观察到Pd集中区域。

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